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DMG4710SSS
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±12
Unit
V
V
Continuous Drain Current (Note 4) V GS = 10V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 5) V GS = 4.5V
Steady
State
t ≤ 10 sec
t ≤ 10 sec
T A = 25°C
T A = 85°C
T A = 25°C
T A = 85°C
T A = 25°C
T A = 85°C
I D
I D
I D
8.8
6.3
11.7
8.5
10.8
7.8
A
A
A
Pulsed Drain Current (Note 6)
Avalanche Current (Notes 6 & 7)
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH
I DM
I AR
E AR
90
13
25.4
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
P D
R θ JA
T J , T STG
Value
1.54
81
2.8
45
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics @ T A = 25°C unless otherwise stated
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
0.1
±100
V
mA
nA
V GS = 0V, I D = 1mA
V DS = 30V, V GS = 0V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
V GS(th)
R DS (ON)
|Y fs |
V SD
I S
1.0
-
-
-
-
-
-
9.5
11.5
22
0.38
-
2.3
12.5
14.8
-
0.6
5
V
m Ω
S
V
A
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 11.7A
V GS = 4.5V, I D = 10.8A
V DS = 5V, I D = 11.7A
V GS = 0V, I S = 1A
-
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge V GS = 4.5V
Total Gate Charge V GS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
0.54
-
-
-
-
-
-
-
-
1849
158
123
2.68
18.5
43
4.7
4.0
6.62
8.73
36.41
4.69
-
-
-
4.82
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
V DS =15V, V GS = 0V,
f = 1.0MHz
V DS =0V, V GS = 0V, f = 1MHz
V DS = 15V, V GS = 10V,
I D = 11.7A
V GS = 10V, V DS = 10V,
R G = 3 ? , R L = 1.2 ?
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout. The value in any given application depends on the user’s specific board design.
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 1 oz. Copper, single sided , device is measured at t ≤ 10 sec.
6. Repetitive rating, pulse width limited by junction temperature.
7. I AR and E AR rating are based on low frequency and duty cycles to keep T J = 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMG4710SSS
Document number: DS32055 Rev. 6 - 2
2 of 6
www.diodes.com
November 2010
? Diodes Incorporated
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